1. High-quality dry oxidation of silicon dioxide (SiO₂), typically for films below 300 nm;

2. Wet oxidation for thick silicon dioxide films, ranging from 300 nm to 3 μm;

3. Thermal annealing processes below 1100°C.

Process / Testing Capabilities

• Dry oxidation for high-quality SiO₂ films (below 300 nm);
• Wet oxidation for thick SiO₂ films (300 nm to 3 μm);
• Thermal annealing processes below 1100°C.

Technical Specifications

• Compatible with wafers up to 6 inches (and smaller sizes);
• Temperature range: 300°C to 1100°C;
• Heating rate: 10°C/min;
• Dry oxidation using oxygen (O₂) process;
• Wet oxidation using a steam generator (steamer).