Patterning - Fabrication Processes - Process Capabilities - 上海交通大学先进电子材料与器件平台

Home > Process Capabilities > Fabrication Processes > Patterning

Fabrication Processes

Patterning

Patterning

EBL + electron beam evaporation for fabrication of Ti/Au metal electrodes with 200 nm linewidths based on a lift-off process:

00KV Electron Beam Lithography (EBL): Min. 8~10 nm

Nonlinear activator for optical computing.

EBL+ICPRIE：minimum designed feature size of 100 nm and etch depth of 220 nm.

Patterned 8-inch wafer after DUV lithography.Photoresist thickness: 400 nm; minimum feature size: 200 nm.

3D micro/nano printing of enclosed microfluidic channels：Min. 100 nm

Laser maskless direct-write grayscale lithography：The current minimum resolution of the system is 0.6 μm.

Nanoimprint Lithography (NIL): Min. ≤20nm

Focused Ion Beam (FIB) direct deposition and etching: Min. ≤20nm