Thin Film Growth & Deposition
Process Categories Technical Methods Typical Materials / Film Layers Characteristics and Applications
 

Chemical Vapor Deposition (CVD)

 

LPCVD、PECVD、ICP-CVD
Dielectrics (SiO₂), amorphous / polycrystalline silicon
High film quality with controllable properties; suitable for ultrathick dielectric layers and low-temperature deposition (e.g., PECVD).
 

Physical Vapor Deposition (PVD)

 

Sputtering, electron beam evaporation, thermal evaporation, IBD (Ion Beam Deposition)

 

Metals (Al/Cu), oxides (Ta₂O₅)

 

Seed layers for high-aspect-ratio structures (TSV/TGV); functional thin films (e.g., V₂O₅).

 

Atomic Layer Deposition (ALD)

 

Thermal ALD, plasma-enhanced ALD (PEALD)

 

High-k dielectrics (HfO₂), ferroelectric thin films

 

Atomic-level thickness control with excellent step coverage, suitable for nanoscale devices.

 

Piezoelectric Thin Film Deposition

 

Multi-chamber system (Mo/AlN/AlScN/planarization)

 

AlScN multilayer piezoelectric stack

 

High-performance piezoelectric devices (e.g., MEMS sensors), supporting simultaneous deposition of multiple materials.

 

Organic Molecular Deposition

 

Surface modification, Parylene deposition

 

Superhydrophobic/hydrophilic coatings, encapsulation films

 

High biocompatibility, used for functionalized surfaces or device protection (e.g., flexible electronics).

 

Thermal Oxidation

 

Dry and wet thermal oxidation

 

SiO₂ oxide layer

 

Semiconductor insulating layer formed via high-temperature processes (requires a silicon substrate).

 

Low-Temperature Carbon Material Growth

CVD/PECVD
 

Graphene, carbon nanotubes (CNTs)

 

Low-temperature (<500 °C) growth, compatible with flexible substrates, used for sensors or conductive materials.

 

Molecular Beam Epitaxy (MBE)

 

Solid-source / gas-source MBE

 

SiGe, III-V compounds (GaAs/InP)

 

Ultra-high vacuum environment with atomic-scale epitaxial control; used for high-speed electronic and optoelectronic devices (e.g., lasers).

 

 

×