| Process Categories | Technical Methods | Typical Materials / Film Layers | Characteristics and Applications |
|---|---|---|---|
|
Chemical Vapor Deposition (CVD)
|
LPCVD、PECVD、ICP-CVD |
Dielectrics (SiO₂), amorphous / polycrystalline silicon
|
High film quality with controllable properties; suitable for ultrathick dielectric layers and low-temperature deposition (e.g., PECVD).
|
|
Physical Vapor Deposition (PVD) |
Sputtering, electron beam evaporation, thermal evaporation, IBD (Ion Beam Deposition) |
Metals (Al/Cu), oxides (Ta₂O₅) |
Seed layers for high-aspect-ratio structures (TSV/TGV); functional thin films (e.g., V₂O₅). |
|
Atomic Layer Deposition (ALD) |
Thermal ALD, plasma-enhanced ALD (PEALD) |
High-k dielectrics (HfO₂), ferroelectric thin films |
Atomic-level thickness control with excellent step coverage, suitable for nanoscale devices. |
|
Piezoelectric Thin Film Deposition |
Multi-chamber system (Mo/AlN/AlScN/planarization) |
AlScN multilayer piezoelectric stack |
High-performance piezoelectric devices (e.g., MEMS sensors), supporting simultaneous deposition of multiple materials. |
|
Organic Molecular Deposition |
Surface modification, Parylene deposition |
Superhydrophobic/hydrophilic coatings, encapsulation films |
High biocompatibility, used for functionalized surfaces or device protection (e.g., flexible electronics). |
|
Thermal Oxidation |
Dry and wet thermal oxidation |
SiO₂ oxide layer |
Semiconductor insulating layer formed via high-temperature processes (requires a silicon substrate). |
|
Low-Temperature Carbon Material Growth |
CVD/PECVD |
Graphene, carbon nanotubes (CNTs) |
Low-temperature (<500 °C) growth, compatible with flexible substrates, used for sensors or conductive materials. |
|
Molecular Beam Epitaxy (MBE) |
Solid-source / gas-source MBE |
SiGe, III-V compounds (GaAs/InP) |
Ultra-high vacuum environment with atomic-scale epitaxial control; used for high-speed electronic and optoelectronic devices (e.g., lasers). |

