Wet Cleaning & Etching - Fabrication Processes - Process Capabilities - 上海交通大学先进电子材料与器件平台

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Fabrication Processes

Wet Cleaning & Etching

Wet Cleaning & Etching

Wet Cleaning

RCA standard cleaning, organic cleaning

Wet Etching

Anisotropic/isotropic etching of Si, and etching of SiO₂, SiNₓ, Al, Cu, Ti, Au, Cr, etc.

Inorganic and organic photoresist stripping

Through-Glass Via (TGV) etching

Metal electroplating and electroforming

TSV-Cu、TGV- Cu-RDL-Cu、SnAg、Ni、FeNi、Au

Chemical Mechanical Polishing (CMP)

Chemical mechanical polishing (CMP) of dielectrics, silicon, and metals, followed by post-cleaning.

Drying

Spin drying (SRD), CO₂ supercritical drying, etc.

LPCVD silicon nitride thin film grown on a 6-inch wafer, with a thickness of 300 nm and thickness uniformity <3%.

SiO₂ thin film grown on a 6-inch wafer by thermal oxidation, with a thickness of 500 nm and thickness uniformity <1%.

KOH wet etching of SiNₓ thin film, with a window diameter of 0.52 mm.