Horizontal LPCVD Furnace

Home > Facilities > Micro-/Nano Fabrication > Thermal Processing & Ion Implantation > LPCVD (Amorphous / Polycrystalline Silicon Deposition).

Equipment Information Guidelines for Contract Processing Inquiry

LPCVD (Amorphous / Polycrystalline Silicon Deposition).

Operating

Model：	LH2
Function：	1.High-quality polysilicon deposition at approximately 630°C (process gas: silane); 2.High-quality amorphous silicon deposition at approximately 540°C.
Engineer：	Li / +86-21- 34206126-6015 / lijinxi@1
Location：	West Area – High-Temperature Furnace
Equipment ID：	WDFSLPF01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Applications

This system is used for depositing polysilicon or amorphous silicon thin films via Low-Pressure Chemical Vapor Deposition (LPCVD). The deposited films exhibit high quality and are critical in micro/nano fabrication, especially in silicon-based CMOS processes.

Process / Testing Capabilities

Deposition of polysilicon and amorphous silicon thin films using LPCVD. Typical process temperature: around 600°C. Film thickness range: approximately 30 nm to 400 nm. Film uniformity: within 3%.

Technical Specifications

Suitable for wafers up to 6 inches. LPCVD-based thin film deposition for both polysilicon and amorphous silicon.

Using LPCVD, silane (SiH₄) decomposes at elevated temperatures to form silicon thin films, which are deposited onto silicon substrates.

Polysilicon thin film deposition in CMOS fabrication processes.

Only 3”–6”silicon wafers (round wafers) are allowed. Post-processed wafers are strictly prohibited.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What is the typical process temperature?

Approximately 600°C

Message Inquiry

If your question is not listed above, please email us at [email protected] or click the button below to submit an inquiry.

Email Inquiry

Note: "@1" represents "@sjtu.edu.cn"