Organic Chemical Vapor Deposition System (Monolayer Surface Modification)

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Molecular Vapor Deposition

Operating

Model：	RPX-540
Function：	1. This equipment can perform surface modification and functionalization on high-aspect-ratio structures of semiconductor-compatible and biocompatible substrates such as silicon wafers and glass slides in a vapor-phase environment. It can form highly uniform monolayer thin films to achieve hydrophobic surfaces, hydrophilic surfaces, and functional surfaces with specific functional groups, supporting relevant semiconductor and biochemical experiments; 2. This device can be used in conjunction with the nanoimprint lithography system purchased in the second phase of the AEMD platform. It effectively improves the surface release quality of nanoimprinting and further enhances the pattern fabrication capability of the nanoimprint equipment; 3. As a fully functional surface modification system, this instrument supports multiple deposition modes, including ALD (Atomic Layer Deposition), CVD (Chemical Vapor Deposition) and SAM (Self-Assembled Monolayer) deposition.
Engineer：	Wu / +86-21- 34206126-6028 / lynn_wu@1
Location：	East Area – Thin Film IV
Equipment ID：	EFM4MVD01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

1. It enables surface modification of high-aspect-ratio structures on semiconductor-compatible and biocompatible substrates such as silicon wafers and glass slides in a vapor phase environment, to fabricate highly uniform monolayer thin films with hydrophobic, hydrophilic, and specific functional group-modified surfaces.

2. As a full-function surface modification system, it supports multiple deposition methods including ALD (Atomic Layer Deposition), CVD (Chemical Vapor Deposition) and SAM (Self-Assembled Monolayer) deposition.

Process/Testing Capability

Water contact angle of hydrophobic treatment: ＞100°
Water contact angle of superhydrophobic treatment: ＞150°
Capable of depositing biological functional layers such as APTMS
Capable of depositing organic-inorganic hybrid films

Technical Specifications

In-chamber vacuum degree under working condition: ≤ 2 Pa (~0.015 Torr)
Operating temperature: 45–60 ℃
Accommodation capacity: two cassettes for 25 pieces of 8-inch wafers, or one cassette for 13 pieces of 12-inch wafers

Two types of reactive gases (or vapors) are alternately introduced into the reactor in the form of gas pulses. Thin films are formed through reactions with adsorbed molecules remaining on the substrate surface, such as hydroxyl or amino groups. Since the reactants involved in each reaction are limited to the molecules chemically adsorbed on the substrate surface, this process features self-limiting growth characteristics.

It can be used for anti-adhesion modification on the surface of nanoimprint masters.

Anti-adhesion treatment for helical gratings and MEMS devices.

Anti-adhesion treatment for helical gratings and MEMS devices.

Powder samples are prohibited. All samples must have clean surfaces.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What are the advantages of this equipment compared with conventional liquid-phase modification?

It can process multiple wafers or other three-dimensional objects in a single deposition run and provides excellent conformality on high-aspect-ratio structures.

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