Field Emission Scanning Electron Microscope

Field emission scanning electron microscope（FE-SEM）

Operating

Model：	ULTRA PLUS
Function：	High-resolution microscopic morphology observation and micro-area compositional analysis.
Engineer：	Wang / +86-21- 34207734-8006 / wangying@1
Location：	West Area – Testing II
Equipment ID：	WT2ZSEM01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

It is primarily used for ultra-high-resolution microscopic morphology observation of micro- and nano-scale materials and structures. It can also be combined with an energy-dispersive X-ray spectroscopy (EDS) system to perform micro-area compositional analysis of material or structure surfaces and cross-sections.

Process/Testing Capabilities

Field emission scanning electron microscopy (FE-SEM) is widely used in the inspection of semiconductors, inorganic non-metallic materials, and devices due to its high resolution, large depth of field, enhanced stereoscopic imaging, and wide adjustable magnification range.

It enables secondary electron imaging and backscattered electron imaging of surface morphology for various solid samples, as well as image processing. When equipped with an energy-dispersive X-ray spectroscopy (EDS) system, it can perform qualitative, semi-quantitative, and quantitative elemental analysis at micro-regions (point, line, and area) on the sample surface. It provides integrated analytical capabilities for both morphology and chemical composition.

Technical Specifications

1. Resolution: ≤ 0.8 nm @ 15 V; ≤ 1.6 nm @ 1 kV

2. Accelerating voltage: 0.02 kV–30 kV; excellent low-voltage performance suitable for observing low-conductivity samples

3. Detectors: in-lens high-efficiency secondary electron detector and energy-selective backscattered electron detector; chamber-mounted high-efficiency secondary electron detector and angle-selective backscattered electron detector, enabling simultaneous acquisition of SE and BSE images

4. Sample stage: maximum sample size Φ200 mm

5. Five-axis motorized eucentric stage, tilt range -3° to 70°, continuous 360° rotation

6. Equipped with EDS system for micro-area compositional analysis

7. Ion sputter coater for gold (Au) coating deposition

Field emission scanning electron microscopy (FE-SEM) uses a field emission electron source to generate a high-energy electron beam, which is focused onto the sample surface through an electromagnetic lens system. When the electron beam interacts with the sample, signals such as backscattered electrons, scattered electrons, and secondary electrons are generated. These signals are collected and converted into images, enabling observation and analysis of the sample’s surface microstructure.

When equipped with an energy-dispersive X-ray spectroscopy (EDS) system, it allows simultaneous microscopic morphology observation and micro-area compositional analysis.

Scanning electron microscopy (SEM) image.

EDS analysis

[Please arrive at the laboratory at least 15 minutes in advance to prepare the sample]Magnetic and powder samples are not allowed. Samples must be kept clean, and direct contact with hands is prohibited. The maximum wafer size is 6 inches.

Sample requirements:

1.The sample must be a dry, anhydrous solid with no volatile solvents.

2.Non-magnetic materials only.

3.Porous materials must be pre-vacuumed prior to operation.Self-service operating hours:11:30–13:30 (noon) and 17:00–22:00 daily.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What are the testing modes of EDS?

EDS includes point analysis, line scan, and area mapping modes.

A. Point analysis selects a small region on the sample for measurement, providing information such as elemental species and relative composition.

B. Line scan performs continuous measurements along a line to obtain compositional variation along that line.

C. Area mapping scans a selected surface region to acquire elemental distribution information across the entire area.
02

How to prepare a cross-section sample for SEM imaging?

A. For samples such as silicon wafers and glass slides, dicing can be used to cut the sample and expose the region of interest.

B. Mount the sample vertically on the sample holder, with the cross-section surface facing upward for observation.
03

What are the general requirements for SEM sample preparation?

A. The region of interest must be properly exposed for analysis.

B. The sample surface should have good electrical conductivity; if conductivity is poor, gold or carbon coating can be applied to improve it.

C. The sample must not contain volatile substances.

D. The sample should be resistant to electron beam damage.

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