This system is used for high-quality silicon nitride thin film deposition via Low-Pressure Chemical Vapor Deposition (LPCVD). The furnace-grown silicon nitride films exhibit high density, high temperature stability, and excellent film quality. The system supports two types of deposition:

1. Standard high-quality silicon nitride (Si₃N₄) thin films;

2. High-quality low-stress silicon nitride (Si₃N₄) thin films.

Typical reaction temperature: ~760°C. Reaction pressure: ~0.2 Torr. Film thickness range: approximately 10 nm to 400 nm. Film uniformity: within 3%.

Compatible with wafers up to 6 inches (and smaller sizes). Process temperature: ~760°C. Vacuum pressure: ~0.2 Torr. Process gases: ammonia (NH₃) and dichlorosilane (DCS).