Plasma Enhanced Atomic Layer Deposition

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Plasma-Enhanced Atomic Layer Deposition System (Metal)

Operating

Model：	FIJI F200
Function：	Used for depositing ultra-thin, highly uniform, and highly conformal metal thin films (e.g., Cu, TiN, Ru), suitable for high-aspect-ratio structures such as TSVs and deep trench devices.
Engineer：	Wu / +86-21- 34206126-6028 / lynn_wu@1
Location：	East Area – Thin Film IV
Equipment ID：	EFM4ALD01

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Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

This system supports both thermal ALD and plasma-enhanced ALD (PEALD) modes, primarily used for depositing ultra-thin, highly uniform, and conformal metal thin films (e.g., Cu, TiN, Ru).

It utilizes ICP (inductively coupled plasma) assistance to enable high-quality film deposition at low plasma power, minimizing substrate damage. The system is particularly suitable for coating TSV structures and deep trench devices.

Additionally, the system is capable of depositing dielectric films such as oxides and nitrides; however, to avoid cross-contamination, it is primarily dedicated to metal film deposition.

Process / Testing Capabilities

Deposition of metal thin films: TiN, TaN, Cu, Ru
Deposition of dielectric films: Al₂O₃, AlN
Supports wafers and fragments up to 8 inches
Film uniformity deviation on 8-inch wafers: <3%
Maximum ICP power: 300 W
Maximum substrate temperature: 500°C

Technical Specifications

Compatible with wafers and fragments up to 8 inches
Film uniformity: <3% (on 8-inch substrates)
High conformality deposition capability (aspect ratio >20:1; higher achievable under optimized processes)

Atomic Layer Deposition (ALD) is a specialized chemical vapor deposition technique in which gaseous precursors are alternately introduced into the reaction chamber. These precursors undergo surface adsorption and chemical reactions, forming thin films at the atomic scale.

Key characteristics of ALD include:

1. Self-limiting growth: Each reaction cycle deposits a single atomic layer, ensuring precise control of thickness and composition;

2. Excellent conformality: Uniform coating on complex 3D structures;

3. Large-area uniformity: Consistent film deposition over large substrates;

4. Low-temperature processing: Suitable for temperature-sensitive materials.

Deposition of TiN thin films on silicon wafers using PEALD.Film thickness: ~40 nm. Resistivity: ~80 μΩ·cm. Thickness uniformity deviation: <3%.

Powder samples are prohibited.

Sample surfaces must be clean.

Photoresist-coated samples are not allowed for deposition.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

Can other materials be deposited?

Possible for large-volume demand; users must provide their own precursor bottles and source materials.
02

Can this system deposit dielectric films?

Yes. For applications with low leakage requirements, Al₂O₃ and AlN films can be deposited

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