It enables non-contact and non-destructive thickness measurement of thin film samples, capable of testing thin film thickness and optical constants. It features fast measurement and simple operation, with accuracy typically reaching the nanometer or angstrom level. The wavelength range is selectable from ultraviolet to near-infrared. The sample stage supports 12-inch and smaller wafers, including irregular fragments, and supports automatic area scanning. It is widely used to measure the thin film thickness of various materials such as silicon dioxide, silicon nitride, silicon, and photoresist.

Process/Testing Capabilities

It is applicable to the non-destructive measurement of thin film thickness for various materials such as silicon dioxide, silicon nitride, silicon and photoresist. It is widely used in various fields ranging from basic research to industrial production, including semiconductor materials, thin film growth, and lithography process monitoring.

Technical Specifications

• Detection wavelength range: 190nm — 1700nm.
• The sample stage is compatible with 12-inch, 8-inch, 6-inch, 5-inch and 4-inch samples, and can also measure irregular-shaped samples.
• Film thickness measurement accuracy: ≤±0.2% or 1 nm; measurement precision (100 consecutive tests): ≤0.02 nm; measurement stability (100 tests): ≤0.05 nm.