Electrochemical CV-Profiler

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Electrochemical CV Tester

Operating

Model：	CVP21
Function：	Measurement of depth-dependent doping concentration distribution on silicon wafer surface, with the carrier concentration ranging from 10¹¹ cm⁻³ to 10²¹ cm⁻³.
Engineer：	Li / +86-21- 34206126-6012 / litq@1
Location：	East Area – CMP
Equipment ID：	ECMPECV01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

Electrochemical CV measurement is mainly applied to the research and development of semiconductor materials. Its principle adopts the electrochemical capacitance-voltage (C-V) method to measure the doping concentration distribution of semiconductor materials. A suitable electrolyte is selected to make contact with and etch the material. Through C-V scanning, the doping concentration distribution on the surface of silicon substrates can be accurately measured, which is used to evaluate and control the doping process in semiconductor manufacturing. The measurable carrier concentration ranges from 10¹¹ cm⁻³ to 10²¹ cm⁻³.

Process/Testing Capabilities

It can rapidly measure and calculate the sheet resistance, junction depth and surface concentration of the diffusion layer, and is suitable for evaluating and controlling the epitaxial process in semiconductor manufacturing.

Technical Specifications

Maximum sample size: 8-inch wafer.The minimum sample size shall cover the sealing ring area and make contact with two probes simultaneously; a size of 2 cm×2 cm or larger is recommended.

The carrier concentration ranges from 10¹¹ cm⁻³ to 10²¹ cm⁻³.

The principle of ECV measurement is based on the anodic oxidation and electrolysis principles in electrochemistry. With a suitable electrolyte, it can serve as an electrode for Schottky contact to measure C-V characteristics and perform electrochemical etching simultaneously. Therefore, it is capable of layer-by-layer stripping to measure the concentration distribution of electrically active impurities.

Doping concentration distribution diagram measured on Si calibration wafer:

Sample size less than 8 inches; this equipment adopts destructive testing:

1. It is required to scrape both ends of the sample surface to form contact points for probes.

2. The tested area will be etched by corrosive solution.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

The resistance test consistently fails to reach green or yellow values and only displays red values.

This usually indicates that the sample resistance is excessively high. Use a special blade to further scrape the sample surface at the contact positions, or apply more Ga-In alloy to improve the contact between the probes and the sample. If there is no improvement after multiple attempts, the sample itself may have overly high resistance and cannot be subjected to ECV measurement.

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