Multi-Target Magnetron Sputtering

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Multi-target Magnetic Control Sputtering System

Operating

Model：	Explorer-14
Function：	Used for the sputtering deposition of various metal thin films;Reactive sputtering deposition of multiple oxide and nitride thin films; Equipped with the function of in-situ substrate cleaning.
Engineer：	Fu / +86-21- 34206126-6010 / xuecheng.f@1
Location：	West Area – Thin Film IA
Equipment ID：	WF1DMSP01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

Sputtering deposition of various metal, oxide and nitride thin films;
Capable of fabricating functional thin film materials via reactive sputtering;
Enables in-situ substrate cleaning and multi-target co-sputtering deposition of composite thin films.

Process/Testing Capability

Capable of sputtering a variety of metal, semiconductor and ceramic thin films with controllable thickness, including Cr, Cu, Ag, Al, Ti, Mo, ITO, AZO, TiNx, etc.

The maximum deposition thickness is generally no more than 3 μm. The resistivity of deposited metal thin films can be adjusted on demand.

Technical Specifications

Supports thin film deposition on substrates smaller than 6 inches.
The deposited film thickness typically ranges from 2 nm to 2 μm.
Refractive index of silica: approximately 1.47.
Refractive index of TiO₂: approximately 2.40.
For 6-inch substrates: film thickness error ±3%, uniformity ±3%, repeatability fluctuation ±2%.

Electric fields or radio frequency (RF) power ionize the working gas (argon). A magnetic field constrains electron motion to raise the ionization efficiency, thereby increasing plasma density and sputtering rate.

High-energy particles with energy exceeding the sputtering threshold bombard the target surface, ejecting target atoms. These atoms deposit onto the substrate to realize sputtering coating.

Multi-target alternating sputtering is employed to deposit 15 nm-periodic thin films for the fabrication of thermoelectric thin-film devices. The film thickness is precisely controllable, with a thickness uniformity within ±2%.

Samples requiring substrate heating above 100 °C will not be accepted.

Samples with excessive moisture (i.e., samples with thick photoresist over 3 μm) will not be accepted.
Samples requiring sputtering of magnetic materials (Fe, Ni) will not be accepted.
Samples larger than 6 inches in size will not be accepted.
Coating services on tiny particle samples (sub-millimeter scale) will not be accepted.

Samples requiring substrate heating above 100 °C will not be accepted.

Samples with excessive moisture (i.e., samples with thick photoresist over 3 μm) will not be accepted.
Samples requiring sputtering of magnetic materials (Fe, Ni) will not be accepted.
Samples larger than 6 inches in size will not be accepted.
Coating services on tiny particle samples (sub-millimeter scale) will not be accepted.

Ensure the power supply is fully turned off before target replacement.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

Why must ceramic targets be bonded to a copper backplate?

Ceramic targets are prone to cracking during sputtering, and fragmented debris may contaminate the cathode gun. Bonding with a copper backplate effectively extends the service life of ceramic targets.
02

How to handle target poisoning?

Target poisoning is a common issue in reactive sputtering. It is recommended to set the sputtering power conservatively to maintain stable and consistent power output throughout the process.
03

What is reactive sputtering target poisoning?

When the target metal undergoes oxidation or nitridation, its electrical resistance increases. This leads to reduced cathode gun power and a rise in cathode voltage.
04

Why are magnetic materials prohibited for processing?

Magnetic targets will attenuate the magnetic field, hinder glow discharge ignition, and permanently weaken the magnetism of cathode gun magnets.

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