The system is a hot-wall tube chemical vapor deposition (CVD) system for the growth of carbon nanomaterials, including carbon nanotubes and graphene films, on substrates up to 4 inches in diameter. It accommodates a wide variety of sample geometries, including flat substrates, rolled materials, and three-dimensional porous structures. Both low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) processes are supported.

Process/Testing Capabilities

• Vertically Aligned Multi-Walled Carbon Nanotube (VACNT) Growth：Fe catalyst on silicon substrates， CNT length: >1 mm， CNT diameter: <20 nm， Height uniformity: within ±5%
• Monolayer Graphene Growth: Monolayer graphene grown on copper foils with dimensions up to 100 mm × 100 mm, Surface coverage: >90%, Monolayer ratio: >90%
• Multilayer Graphene Growth：Multilayer graphene grown on nickel-based substrates and copper foils up to 100 mm × 100 mm， Surface coverage: >90%

Technical Specifications

• Compatible with substrates up to 4 inches
• Base pressure: <50 mTorr
• Maximum operating temperature: 1100°C
• Temperature uniformity within the constant-temperature zone: better than ±0.5°C
• Film coverage: >90%