SVCS Horizontal Oxidation / Diffusion Furnace

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Boron Diffusion Furnace (P-Type Doping)

Commissioning

Model：	AH3
Function：	High-temperature furnace tube for boron diffusion doping processes.
Engineer：	Li / +86-21- 34206126-6015 / lijinxi@1
Location：	West Area – High-Temperature Furnace
Equipment ID：	WDFSOXD01

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Basic Equipment Information
Operating Principle
Typical Application Case

Main Applications

This furnace is used for boron diffusion doping processes in semiconductor fabrication.

Process / Testing Capabilities

Boron diffusion for 3", 4", and 6" silicon wafers. Process temperature: below 1100°C.

Technical Specifications

Atmospheric-pressure boron diffusion furnace. Compatible with 3", 4", and 6" standard front-end clean silicon wafers. Doping achieved using a liquid boron source (BBr₃, boron tribromide) at approximately 900°C.

At temperatures between 900°C and 1100°C, boron tribromide (BBr₃) is introduced into the furnace, where it reacts and diffuses boron atoms into the wafer to achieve P-type doping.

Thermal diffusion doping in CMOS fabrication processes.

Front-end high-temperature furnace only; contamination is strictly prohibited.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

Can this equipment be used for post-processed samples?

No. Contamination is strictly prohibited; post-processed samples are not allowed.

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