It is primarily used for structural observation and measurement of micro- and nano-fabricated samples, and can also be applied to measurements of large samples exceeding the field of view.

Technical Specifications

For standard samples, the planar measurement accuracy is ≤3µm+2%×L, where L is the measured length. Acceptance criteria: for L=100mm, the measured result is 99.9988 mm; for L=1mm, the measured result is 0.9991 mm.

For standard samples, the Z-axis measurement accuracy is ≤5µm+3%×L, where L is the measured length. Acceptance criteria: for L=1.38mm, the measured result is 1.3806 mm.

For deep silicon-etched trench samples with an opening width of 50 µm and a depth greater than 120 µm, the depth measurement error is ≤ 5 µm.