AEMD silicon nitride wafers are fabricated using Low-Pressure Chemical Vapor Deposition (LPCVD) in a tube furnace. The available film thickness ranges from 10 nm to 500 nm, with process temperatures above 700°C.

Compared with silicon nitride films deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) or sputtering, LPCVD silicon nitride films exhibit:

Higher film density

Better corrosion resistance

Higher hardness

Superior masking performance

For these reasons, LPCVD silicon nitride is widely used as a masking layer for alkaline silicon etching processes.

AEMD’s LPCVD systems employ SVCS horizontal furnace tubes manufactured in the Czech Republic, featuring:

High process stability

Excellent film uniformity

Superior particle control performance

Each silicon nitride furnace tube can process up to 50 wafers per batch, providing excellent within-wafer and wafer-to-wafer uniformity.

In the semiconductor industry, silicon nitride films are commonly used as:

Dielectric layers

Passivation layers

Hard masks

They are also widely applied in micromechanics and MEMS fabrication.

Definition of active regions during field oxidation processes

Fabrication of membranes, cantilevers, and other MEMS-related mechanical structures

AEMD Silicon Nitride Thin Film Image