Angled Sidewall Etching Process

In the fabrication of optoelectronic devices, most processes require vertical sidewall profiles after etching. However, certain device structures—such as patterned substrates and multi-level mesa metallization “climbing” processes—require anisotropic etching with controlled, inclined sidewall angles.

The AEMD platform employs internationally advanced micro/nanofabrication technologies. Based on mature processes such as lithography and dry etching, it is capable of achieving sidewall etching with tunable inclination angles and smooth surface morphology.

Applications of Inclined Sidewall Structures

SiO₂ sacrificial layers in MEMS devices

Inclined-angle insulating dielectric layers for improved sidewall coverage

Three-dimensional surface structures in the optical industry, such as microlenses, microgrooves, microcones, and microprisms

Demonstration of Existing Process Capabilities at AEMD

AEMD Platform Inclined Sidewall Fabrication Capability

Etching structures can be mesa etching or via (hole) etching.

The etched surface quality is high, with post-etch surface quality comparable to the pre-etch condition.

The minimum feature size of the pattern can reach 5 μm.

Etching materials include bulk quartz and silicon oxide thin films.

Processing area: up to 6-inch wafers, with compatibility for diced samples.

The platform also provides customized services. Based on customer application conditions and environmental parameters, cone/truncated-cone etching processes can be designed. For detailed requirements, please contact the process engineers for consultation.