VHF etch System

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VHF Etching System

VHF etch System

Operating

Model：	Uetch-SyS
Function：	VHF etching of SiO₂ thin films
Engineer：	Zhang / +86-21- 34206126-6020 / dzlzhangyan@1
Location：	East Area – Thin Film IV
Equipment ID：	EFM3VHF01

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Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

VHF etching is mainly used for silicon dioxide etching. It can effectively avoid stiction caused by wet etching, and also prevent the corrosion of Al/Al₂O₃/Au/Cu materials induced by residual moisture after wet etching. In MEMS processes, it enables precise and controllable sacrificial layer release and undercut fabrication.

Process / Testing Capabilities

8-inch SiO₂ etching uniformity up to 1.5%
Undercut fabrication: 2–20 μm, 20–100 μm
Thickness: greater than 1.3 mm
Opening size: 0.25 μm–10 μm
Stiction-free

Technical Specifications

Substrate Size：8inch
Undercut fabrication: 2–20 μm, 20–100 μm
Thickness: greater than 1.3 mm
Opening size: 0.25 μm–10 μm
Stiction-free

SiO2+2HF2^-+2(Alc)H⁺→SiF4+2H₂O+2(Alc)

undercut fabrication

Penetration

Maximum wafer size: 8 inches. Two to three test samples are required for process debugging of undercut structures, with the SiO₂ thickness greater than 200 nm.

It is necessary to confirm that the exhaust gas treatment device has been turned on before starting the equipment.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What are the main influencing factors on the etching rate of the release process?

The adjustment of etching rate is significantly affected by the opening ratio. A low etching rate shall be adopted for the first etching to prevent over-etching.

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