Model:HSE200
Function:1.Deep silicon etching using Bosch or non-Bosch processes; 2.TSV (Through-Silicon Via) deep silicon etching; 3.Surface silicon structure etching for SOI wafers.
Model:ICP-SR
Function:1. Deep silicon etching using Bosch or non-Bosch processes; 2. TSV (Through-Silicon Via) deep silicon etching; 3. Surface silicon structure etching for SOI wafers.
Model:DSE200s
Function:1.Deep silicon etching using Bosch or non-Bosch processes; 2.TSV (Through-Silicon Via) deep silicon etching; 3.Surface silicon structure etching for SOI wafers.
Model:C200
Function:1.Etching of dielectric thin films such as silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon oxynitride (SiON); 2.Etching of silicon carbide (SiC) thin films; 3.Quartz etching.
Model:GSE200plus
Function:1.Etching of dielectric thin films such as silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon oxynitride (SiON); 2.Etching of silicon carbide (SiC) thin films; 3.Quartz etching.
Model:NLD570
Function:Dry etching system primarily used for high-aspect-ratio etching of quartz and lithium niobate (LiNbO₃) materials.