• Model:HSE200

    Status: Operating

    Function:1.Deep silicon etching using Bosch or non-Bosch processes; 2.TSV (Through-Silicon Via) deep silicon etching; 3.Surface silicon structure etching for SOI wafers.

    East Area – Thin Film IV+86-21- 34206126-6013
  • Model:ICP-SR

    Status: Operating

    Function:1. Deep silicon etching using Bosch or non-Bosch processes; 2. TSV (Through-Silicon Via) deep silicon etching; 3. Surface silicon structure etching for SOI wafers.

    West Area – Thin Film II+86-21- 34206126-6013
  • Model:DSE200s

    Status: Operating

    Function:1.Deep silicon etching using Bosch or non-Bosch processes; 2.TSV (Through-Silicon Via) deep silicon etching; 3.Surface silicon structure etching for SOI wafers.

    West Area – Thin Film II+86-21- 34206126-6013
  • Model:C200

    Status: Operating

    Function:1.Etching of dielectric thin films such as silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon oxynitride (SiON); 2.Etching of silicon carbide (SiC) thin films; 3.Quartz etching.

    East Area – Thin Film III+86-21- 34206126-6013
  • Model:GSE200plus

    Status: Operating

    Function:1.Etching of dielectric thin films such as silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon oxynitride (SiON); 2.Etching of silicon carbide (SiC) thin films; 3.Quartz etching.

    West Area – Thin Film II+86-21- 34206126-6013
  • Model:NLD570

    Status: Operating

    Function:Dry etching system primarily used for high-aspect-ratio etching of quartz and lithium niobate (LiNbO₃) materials.

    East Area – Thin Film IV+86-21- 34206126-6013
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