ICP-RIE Deep Silicon Etching System

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Deep Silicon Etcher

Operating

Model：	DSE200s
Function：	1.Deep silicon etching using Bosch or non-Bosch processes; 2.TSV (Through-Silicon Via) deep silicon etching; 3.Surface silicon structure etching for SOI wafers.
Engineer：	Liu / +86-21- 34206126-6013 / minliu@1
Location：	West Area – Thin Film II
Equipment ID：	WF2NDSE02

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Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

This system is primarily used for deep silicon etching and supports both Bosch and non-Bosch processes, enabling broad process coverage.

It is equipped with advanced fast-response hardware and optimized software control specifically designed for Bosch cyclic processing. Combined with advanced process technologies, the system delivers excellent performance for high-aspect-ratio etching, meeting a wide range of process requirements.

Process / Testing Capabilities

Maximum etch rate: ~6 μm/min. Selectivity to photoresist: up to 50:1. Aspect ratio: >30:1. Sidewall roughness: <50 nm.

Technical Specifications

Designed for 6-inch wafers; compatible with 4-inch, 3-inch wafers and irregular samples. Supports diced samples (with carrier wafer mounting). Applicable to glass substrates such as SOG (Spin-On Glass).

The Bosch process is a cyclic etching technique used in semiconductor manufacturing to suppress lateral etching. It alternates between etching and sidewall passivation steps, depositing a protective film on sidewalls to maintain anisotropic profiles.

This method, originally proposed by Robert Bosch, enables deep silicon etching with high aspect ratios and well-defined vertical structures.

Deep silicon etching for MEMS device fabrication.

Primarily used for deep silicon etching. Samples larger than 6 inches are not accepted. Non-standard wafers or diced samples must be mounted onto carrier wafers for processing.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What mask materials are supported?

Acceptable mask materials include photoresist, silicon dioxide (SiO₂), and silicon nitride (Si₃N₄) hard masks. Metal masks are not permitted.

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