Deep Silicon Etcher

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Deep Silicon Etcher

Operating

Model：	HSE200
Function：	1.Deep silicon etching using Bosch or non-Bosch processes; 2.TSV (Through-Silicon Via) deep silicon etching; 3.Surface silicon structure etching for SOI wafers.
Engineer：	Liu / +86-21- 34206126-6013 / minliu@1
Location：	East Area – Thin Film IV
Equipment ID：	EFM4DSE01

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Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

This system is primarily used for deep silicon etching and supports both Bosch and non-Bosch processes, enabling a wide range of applications.

The tool is equipped with advanced fast-response hardware and optimized software process control specifically designed for Bosch cyclic processes. Combined with advanced process technologies, it delivers excellent performance for high-aspect-ratio etching, meeting diverse process requirements.

Process / Testing Capabilities

Maximum etch rate: ~6 μm/min. Selectivity to photoresist: up to 50:1. Aspect ratio: >30:1. Sidewall roughness: <150 nm.

Technical Specifications

Designed for 6-inch wafers, compatible with 4-inch, 3-inch wafers and irregular silicon samples. Supports processing of diced pieces (with wafer mounting). Can also be used for glass substrates such as SOG (Spin-On Glass).

The Bosch process is a cyclic etching technique in which alternating steps of etching and sidewall passivation are used to suppress lateral etching. A protective film is periodically deposited on the sidewalls to maintain anisotropy.

This process, originally proposed by Robert Bosch, enables deep silicon etching with high aspect ratios and vertical sidewalls.

Deep silicon etching in MEMS device fabrication.

Primarily used for deep silicon etching. Samples larger than 6 inches are not accepted. Non-standard wafers or diced samples must be mounted onto carrier wafers for processing.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What mask materials are supported?

Acceptable mask materials include photoresist, silicon dioxide (SiO₂), and silicon nitride (Si₃N₄) hard masks. Metal masks are not permitted.

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