PVA TePla IoN Wave 10 is an advanced plasma processing equipment, mainly applied to surface cleaning, surface activation and modification processes in the fields of semiconductors, optoelectronics and precision manufacturing. Adopting ion wave technology, the system optimizes the surface properties of materials, such as improving bonding strength, eliminating micro-contamination and enhancing coating adhesion. It is widely used in high-precision industries including wafer fabrication, microelectronic packaging and medical device processing.

Process / Testing Capabilities

1. Dry stripping of positive and negative (SU8) photoresists;

2. Dry removal of polyimide (PI) films;

3. Dry elimination of organic contaminants;

4. Plasma modification on substrate surfaces (O₂/Ar);

5. Equipped with multiple process gases: O₂, Ar, CF₄ and Ar/H₂ mixed gas;

6. Realize surface cleaning, surface activation, surface etching and surface modification.

Technical Specifications

• Ion beam energy: adjustable from 50 eV to 1200 eV to meet diverse process requirements.
• Uniformity: ion beam uniformity better than ±5% within the 6-inch area, ensuring excellent process consistency.
• Etching rate: 0.1 ~ 2 μm/min, delivering high-efficiency material removal.
• Deposition rate: 0.1 ~ 1 μm/min, suitable for high-quality thin film preparation.
• Substrate size: compatible with 2- to 8-inch wafers, covering a wide range of application scenarios.
• Vacuum level: 10^-6 ~ 10^-4 Torr, maintaining a clean processing environment.
• Gas compatibility: compatible with process gases such as Ar, O₂, CF₄ and H₂.
• Temperature control range: room temperature to 300°C, meeting the processing demands of various materials.