Ion Milling /Ion Beam Etching System

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Ion Beam Etching，IBE

Operating

Model：	LKJ-ID-150
Function：	1. RIE etching of metal thin films such as Al, Ni, Cr and Ti; 2. Polysilicon etching; 3. Etching of III-V group semiconductors.
Engineer：	Mao / +86-21- 34206126-6009 / maohaiping@1
Location：	West Area – Thin Film IA
Equipment ID：	EMCAIBE01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

This equipment etches the substrate surface by utilizing low-energy parallel Ar⁺ ion beams. Adopting a pure physical etching principle, it delivers high resolution and excellent sidewall verticality. It is capable of etching nearly all types of materials, including metals, alloys, oxides, compound semiconductors and more.

Process / Testing Capabilities

１. Etching uniformity and repeatability: the uniformity of 4-inch substrates is better than ±5%, and the repeatability is better than ±5%;

２. Capable of ion beam cleaning and ultimate surface polishing of materials.

Technical Specifications

1. Aperture of LKJ-series ion source: Φ150 mm;

2. Adjustable ion energy range: 0～1000 eV;

3. Recommended applicable ion energy: 0～750 eV;

4. Peak beam current: ≥130 mA;

5. Recommended operating beam current: 0～100 mA;

6. Water-cooled stage temperature:-5℃～25℃；Workpiece stage diameter: Ф150mm;

7. Rotation speed: 9 RPM; Maximum substrate size: ≤4 inches.

When directional high-energy Ar⁺ ions strike a solid surface, energy is transferred from the incident ions to the atoms on the solid surface. If the bonding energy between surface atoms is lower than the energy of incident ions, the surface atoms will be sputtered and removed from the material surface. The uncovered areas without mask protection are selectively etched, realizing the purpose of patterned etching.

1. Comparison images of the optical waveguide structure before (upper) and after (lower) ion beam etching.

2. The gold-plated quartz wafers for sensor fabrication were etched by the ion beam etching system, with an average etching rate of 4 nm/min and a center-to-edge non-uniformity of approximately 5%, which fully meets experimental requirements.

For substrates smaller than 4 inches with a thickness below 4 mm, the uniformity requirement is relaxed to ±5%, and there is no restriction on substrate temperature rise.

Sample size: 4 inches. Only argon-based dry etching is available, with no other chemical reaction gases provided. The billing is charged with a minimum unit of 0.5 hours. Please refer to the operation manual for detailed operating procedures.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

No glow discharge is observed, and the ion source controller displays open circuit and arc extinction.

The cathode filament is broken and needs to be replaced with a new one.

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