1. Used for photoresist pattern development processes; 

2. Supports multiple development methods, including spray development, immersion development, and flow rinse;  

3. Widely applied in high-precision pattern transfer processes for IC manufacturing, MEMS fabrication, optoelectronics, and sensors.

1. Supports development processes for wafers of 2–8 inches; 

2. Programmable with up to 20 development steps for complex process flows; 

3. Supports high-speed rotational development (0–3000 rpm); 

4. Development head supports spray, immersion, and flow modes; robotic arm enables automatic reciprocating motion; 

5. Supports post-development nitrogen drying, spin drying, and backside rinse. 

1. Compatible with 2/3/4/5/6/7/8 inch wafers;  

2. Supports up to 20 programmable steps;  

3. Spin speed range: 0–3000 rpm; acceleration reaches 6000 rpm within 0.3 seconds;  

4. Supports multiple development modes: robotic arm movement, immersion, flow, and spray;  

5. Supports nitrogen drying, spin drying, and backside rinse.