TSV copper electroplating

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Electroplating System TSV Cu

Operating

Model：	µGALV
Function：	Electroplating filling of high aspect ratio structures including silicon blind vias, silicon through vias, glass blind vias and glass through vias
Engineer：	Tian / +86-21- 34206126-6031 / miaotian@1
Location：	East Area – Electroplating
Equipment ID：	EPL0TSV01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

Electroplating fills high aspect ratio structures including silicon blind vias, silicon through vias, glass blind vias and glass through vias. Only metallic copper can be deposited. The filling effect differs depending on aspect ratio and aperture diameter.

Process / Testing Capabilities

3, 4 and 6-inch standard wafers.
Wafer thickness: 350 μm - 1000 μm.
Special-shaped samples with size below 150 mm (including broken wafers).
The minimum fillable blind via has a diameter of 10 μm and a depth of 100 μm.

Technical Specifications

3, 4 and 6-inch standard wafers.
Wafer thickness: 350 μm - 1000 μm.
Current control accuracy reaches 1 mA.
Electroplating duration can last over 100 hours.
Stepped current and pulsed current modes are available.

This is a process of depositing copper layers on the substrate surface by electrochemical means. The electroplating solution consists of copper sulfate, conductive salts, pH regulators and other components. During electroplating, the substrate acts as the cathode. After power-on, copper ions are reduced and precipitated on the cathode surface to form a copper coating.

Filling effect of deep vias with an aspect ratio of 10:1

3, 4 and 6-inch standard wafers.
Wafer thickness: 350 μm - 1000 μm.
Please contact relevant engineers in advance.
Since filling effect varies among different via types, please prepare test samples beforehand.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

What is the thickness of the seed layer?

At least 200 nm to ensure continuity within the vias.

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