Function：RTP-761SA.

Function：Heating temperature range: RT to 1100 °C; ramp rate: 10 °C/s; cooling methods: water cooling and gas cooling, average cooling rate ~30 °C/min Process gases: PN₂ and Ar (applicable to conventional annealing, metal silicidation, and alloying processes) Substrate compatibility: 6-inch wafers and smaller samples.

Function：1.Heating temperature range: RT to 1200 °C; ramp rate: 10 °C/s; cooling methods: water cooling and gas cooling, average cooling rate ~30 °C/min; 2.Process gases: N₂, Ar, O₂, NH₃ (control-level RTP; metal materials are strictly prohibited inside the chamber); 3.Vacuum annealing capability available; 4.Substrate compatibility: 6-inch wafers and smaller.

Function：Nitridation-Protected High-Temperature Annealing (RT–1200 °C)