Function：Up to 8-inch, 3–960 keV; Implantation available for B, BF₂, P, As, Ar.

Function：1.High-quality polysilicon deposition at approximately 630°C (process gas: silane); 2.High-quality amorphous silicon deposition at approximately 540°C.

Function：1.Deposition of high-quality silicon nitride (Si₃N₄) thin films; 2.Deposition of high-quality low-stress silicon nitride (Si₃N₄) thin films.

Function：1.High-quality dry oxidation of silicon dioxide (SiO₂). 2.Wet oxidation for ultra-thick silicon dioxide films. 3.Thermal annealing processes below 1100°C.

Function：High-temperature furnace tube for phosphorus diffusion doping processes.

Function：High-temperature furnace tube for boron diffusion doping processes.