Function：1. Step and trench depth measurement within the allowable range of the probe; 2. Thickness measurement of various deposited thin films; 3. Surface roughness measurement.

Function：Thin film thickness measurement with automatic mapping function.

Function：It is used to detect the refractive index (n), extinction coefficient (k), thickness and other parameters of single-layer or multilayer thin films.

Function：1. Substrate thin film stress measurement (Note: Measurement is required once before and once after thin film deposition);2. Thin film stress measurement with temperature rising from room temperature to 500℃.

Function：DC current-voltage (I-V) measurement, pulsed IV, quasi-static and mid-frequency capacitance-voltage (C-V) measurement, time-domain measurement, etc., for semiconductor devices such as diodes, transistors and MOSFETs, as well as related materials.

Function：Measurement of resistance and sheet resistance of semiconductors and semiconductor thin films.